说明:
1. ID=30A~500A, VDRM=VRRM=600V~2500V, VISO≥2500V(RMS),Tjm=125°C, dv/dt≥1000 V/μS,di/dt≥100 A/μS
2. Rth ( j-c )模块=1/4 Rth ( j-c )芯片;
型号
Type |
VDRM
VRRM
(V) |
ID
(A) |
TC
(℃) |
IFSM
ITSM
(A) |
I2t
(A2S) |
VT0
VF0
(V) |
RT0
RF0
(mΩ) |
VISO
(V) |
IRRM
IDRM
(mA) |
VFM
VTM
(V) |
IFM
ITM
(A) |
VGT
(V) |
IGT
(mA) |
IH
(mA) |
Rth(c-h)
单只模块(℃/W) |
Rth(j-c)
单只芯片(℃/W) |
外形结构代号 |
MTQ-30 |
600-2500 |
30 |
85 |
570 |
1620 |
0.9 |
7.31 |
2500 |
10 |
1.54 |
45 |
2 |
100 |
100 |
0.1 |
1.018 |
W40L |
MTQ-60 |
600-2500 |
60 |
85 |
1095 |
5995 |
0.9 |
3.84 |
2500 |
10 |
1.5 |
90 |
2 |
100 |
100 |
0.1 |
0.584 |
W40L |
MTQ-100 |
600-2500 |
100 |
85 |
1560 |
12200 |
0.8 |
2.72 |
2500 |
10 |
1.48 |
150 |
2 |
100 |
100 |
0.1 |
0.376 |
W40L/W64 |
MTQ-150 |
600-2500 |
150 |
85 |
2680 |
35900 |
0.8 |
1.92 |
2500 |
15 |
1.52 |
225 |
2.5 |
100 |
100 |
0.05 |
0.244 |
W64/W54O |
MTQ-200 |
600-2500 |
200 |
80 |
4600 |
105800 |
0.8 |
1.64 |
2500 |
15 |
1.62 |
300 |
2.5 |
150 |
150 |
0.05 |
0.195 |
W64/W54O |
MTQ-250 |
600-2500 |
250 |
80 |
6780 |
229800 |
0.85 |
1.14 |
2500 |
20 |
1.6 |
375 |
2.5 |
150 |
150 |
0.05 |
0.149 |
W64 |
MTQ-300 |
600-2500 |
300 |
80 |
7800 |
304200 |
0.75 |
1.06 |
2500 |
20 |
1.58 |
450 |
2.5 |
150 |
150 |
0.02 |
0.128 |
W64/W80 |
MTQ-400 |
600-2500 |
400 |
80 |
8450 |
357000 |
0.75 |
1.02 |
2500 |
30 |
1.64 |
600 |
3 |
200 |
200 |
0.02 |
0.111 |
W80 |
MTQ-500 |
600-2500 |
500 |
80 |
9880 |
488000 |
0.8 |
0.76 |
2500 |
30 |
1.65 |
750 |
3 |
200 |
200 |
0.02 |
0.102 |
W80 |
3、 适用电路
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